Panel assembly alignment system and alignment method thereof

ABSTRACT

A panel assembly alignment system and an alignment method thereof. A first panel has first alignment patterns arranged at equal pitches. A second panel has second alignment patterns arranged with a pitch between the adjacent patterns being wider as positions of the second alignment patterns are farther away from the pattern. A third panel has third alignment patterns and arranged with a pitch between adjacent patterns being narrower as positions of the third alignment patterns are farther away from the pattern. An operation unit controls a photographing unit to photograph each panel, so as to analyze an overlap portion between the first and the second alignment patterns, determine an offset direction of the second panel corresponding to the first panel, so that when the third panel is placed, the third alignment pattern conforming to the offset direction and a level of the overlap portion is overlapped with the overlap portion.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of Taiwan Patent Application No.099127570, filed on Aug. 18, 2010, which is hereby incorporated byreference for all purposes as if fully set forth herein.

BACKGROUND OF THE INVENTION

1. Field of Invention

The present invention relates to a panel assembly system, and moreparticularly to a panel assembly alignment system and an alignmentmethod thereof, capable of combining a determination technology foralignment photographing of a panel and a technology for changing a pitchbetween alignment patterns of a panel.

2. Related Art

In a naked-eye three-dimensional (3D) display panel in the prior art, inorder to enable a left eye and a right eye of a user to receivedifferent display signals, a color filter panel (CF panel) is usuallyattached to a normal cell panel, and then a slit cell/black matrix (BM)barrier is attached to the CF panel, so that the slit cell/BM barrierseparates a frame signal output by the normal cell panel into displaysignals separately received by the left eye and the right eye.

However, no matter which type of slit cell/BM barrier structure isadopted, more than two times of panel assembly and attachment processesare required, such as a first assembly process in which a normal cellpanel and a CF panel are combined, a second assembly process in whichthe CF panel and a slit cell/BM barrier are combined, a third assemblyprocess in which other assembly elements need to be arranged between thepanels, and so forth. As long as a situation of an alignment offset of apanel occurs during the assembly processes, for example, the CF panel isinclinedly attached to the normal cell panel, the assembled panel cannotcompletely separate the display signals capable of being received theleft eye and right eye, thus lowering a quality that the panel displaysa 3D optical image.

Next, although the manufacturers configure alignment marks on each panelto assist alignment, as a panel size is excessively large, when a slightposition offset occurs in any assembly process of any panel, even if thealignment is performed according to the alignment marks, the portionsfar away from the alignment marks have gradually increasing offsets, andthe alignment marks become completely useless.

Thus, the manufactures consider how to avoid or mitigate a problem thatthe panel cannot completely separate the display signals capable ofbeing received by the left eye and the right eye due to alignmentoffsets, which causes lowering of the quality that the panel displaysthe 3D optical image.

SUMMARY OF THE INVENTION

The present invention is directed to a panel assembly system and amethod thereof capable of adjusting a pitch between alignment patternsof a panel, so as to complete assembly of a liquid crystal panel whilemaintaining a 3D viewing angle effect thereof.

To solve the above-mentioned problems, the invention provides a panelassembly alignment system, which comprises a plurality of firstalignment patterns, a plurality of second alignment patterns, aplurality of third alignment patterns, an element placement unit, atleast one photographing unit, and an operation unit.

The first alignment patterns are formed into a geometric pattern, andarranged at a calibration area of a first panel at equal pitchesoutwardly from a center of the geometric pattern; the second alignmentpatterns are formed into the geometric pattern and arranged at acalibration area of a second panel with a pitch between the adjacentsecond alignment patterns on a same straight line being wider aspositions of the second alignment patterns are farther away from thecenter of the geometric pattern; the third alignment patterns are formedinto the geometric pattern and arranged at a calibration area of a thirdpanel with a pitch between the adjacent third alignment patterns on asame straight line being narrower as positions of the third alignmentpatterns are farther away from the center of the geometric pattern; theelement placement unit is used for placing the first panel, the secondpanel, and the third panel in sequence, wherein the first alignmentpatterns correspond to the second alignment patterns, and the secondalignment patterns correspond to the third alignment patterns; the atleast one photographing unit is used for photographing alignment of thefirst alignment patterns and the second alignment patterns to form afirst image, and continuously photographing alignment of the secondalignment patterns and the third alignment patterns to form a secondimage; and the operation unit is used for acquiring the first image, soas to find out at least one first overlap pattern and at least onesecond overlap pattern overlapped with each other from the firstalignment patterns and the second alignment patterns, and find out anoffset direction of the second panel corresponding to the first panel,and overlapping at least one third overlap pattern conforming to theoffset direction in the third alignment patterns with the second overlappattern when controlling the element placement unit to place the thirdpanel according to the second image.

To solve the above-mentioned problems, the invention provides a panelassembly alignment method, which comprises: placing a first panel on acarrying platform, wherein a plurality of first alignment patterns isarranged to form a geometric pattern and arranged at a calibration areaof the first panel at equal pitches outwardly from a center of thegeometric pattern; placing a second panel on the first panel, so thefirst alignment patterns correspond to a plurality of second alignmentpatterns of the second panel, the second alignment patterns are arrangedto form the geometric pattern, and arranged at a calibration area of thesecond panel with a pitch between the adjacent second alignment patternson a same straight line being wider as positions of the second alignmentpatterns are farther away from the center of the geometric pattern;finding out at least one first overlap pattern and at least one secondoverlap pattern overlapped with each other and an offset direction ofthe second panel corresponding to the first panel from the firstalignment patterns and the second alignment patterns, so as to find outat least one third overlap pattern from a plurality of third alignmentpatterns of a third panel, wherein the third alignment patterns arearranged to form the geometric pattern, and arranged at a calibrationarea of the third panel with a pitch between the adjacent thirdalignment patterns on a same straight line being narrower as positionsof the third alignment patterns are farther away from the center of thegeometric pattern; and placing the third panel on the second panel, sothe at least one third overlap pattern is overlapped with the at leastone second overlap pattern.

The present invention is characterized in that the present invention isapplicable to assembly processes of various slit cell/BM barrierstructures, and assembly times are not limited. Next, when an alignmentoffset of the panel occurs during the assembly processes, the problem ofthe alignment offset of each panel can be modified by using improvedalignment patterns in combination with a photographing alignmenttechnology, so that the assembled panel can completely separate displaysignals capable of being received by a left eye and a right eye, thusimproving a quality that the panel displays a 3D optical image, further,the present invention is applicable to an assembly process of alarge-scale panel.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become more fully understood from thedetailed description given herein below for illustration only, and thusare not limitative of the present invention, and wherein:

FIGS. 1A and 1B are schematic views of architecture of a panel assemblyalignment system according to an embodiment of the present invention;

FIGS. 2A and 2B are schematic views of arrangement of alignment patternsof a first panel according to an embodiment of the present invention;

FIGS. 2C and 2D are schematic views of arrangement of alignment patternsof a second panel according to an embodiment of the present invention;

FIGS. 2E and 2F are schematic views of arrangement of alignment patternsof a third panel according to an embodiment of the present invention;

FIGS. 2G to 2I are schematic views of a pitch between alignment patternsof each panel according to an embodiment of the present invention;

FIG. 3A is a schematic view of ideal overlap of alignment patternsaccording to an embodiment of the present invention;

FIG. 3B is a schematic view of content of a first image according to anembodiment of the present invention;

FIG. 3C is a schematic view of selection of third overlap patternsaccording to an embodiment of the present invention;

FIG. 3D is a schematic view of content of a second image according to anembodiment of the present invention;

FIG. 4A is another schematic view of content of a first image accordingto an embodiment of the present invention;

FIG. 4B is schematic view of another selection of third overlap patternsaccording to an embodiment of the present invention;

FIG. 4C is another schematic view of content of a second image accordingto an embodiment of the present invention;

FIGS. 5A and 5B are schematic views of another architecture of a panelassembly alignment system according to an embodiment of the presentinvention;

FIG. 6A is a schematic flow chart of a panel assembly alignment methodaccording to an embodiment of the present invention; and

FIG. 6B is a detailed schematic flow chart of a process in FIG. 6Aaccording to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The preferred embodiments of the present invention are illustrated belowin detail with reference to the accompanying drawings.

FIGS. 1A and 1B are schematic views of architecture of a panel assemblyalignment system according to an embodiment of the present invention.FIGS. 2A and 2B are schematic views of arrangement of alignment patternsof a first panel according to an embodiment of the present invention.FIGS. 2C and 2D are schematic views of arrangement of alignment patternsof a second panel according to an embodiment of the present invention.FIGS. 2E and 2F are schematic views of arrangement of alignment patternsof a third panel according to an embodiment of the present invention.FIGS. 2G to 2I are schematic views of a pitch between alignment patternsof each panel according to an embodiment of the present invention. Inthis embodiment, assembly processes of panels of three layers areillustrated. A first panel 41 at a bottom layer is a normal cell panel,a second panel 42 at a middle layer is a CF panel, and a third panel 43at an upper layer is a slit cell/BM barrier.

As shown in FIGS. 2A, 2B, and 2G, the first panel 41 includes acalibration area 411 at a periphery thereon. A plurality of firstalignment patterns 51 is arranged on the calibration area 411. The firstalignment patterns 51 form a geometric pattern for positioning, here thegeometric pattern is, for example, a cross arranged by two straightlines being interlaced and perpendicular to each other, but the presentinvention is not limited herein.

The first alignment patterns 51 are outwardly arranged starting with afirst alignment pattern 511 at a center of the cross, in which a pitchbetween every two adjacent first alignment patterns 51 is the same. Itshould be noted that the pitch here means a distance between centers ofevery two alignment patterns, and may also be calculated according toouter sidelines at a periphery of the alignment patterns. Here, eachpitch is R.

As shown in FIGS. 2C, 2D, and 2H, the second panel 42 also includes acalibration area 421 at a periphery thereon. A plurality of secondalignment patterns 52 is arranged on the calibration area 421. Thesecond alignment patterns 52 form a geometric pattern similar to thecross formed by the first alignment patterns 51, and are arrangedoutwardly in a distributed manner starting with a second alignmentpattern 521 at the center of the cross. However, it is different fromthe first alignment patterns 51 that the two adjacent second alignmentpatterns 52 on the same straight line are arranged with a pitch beingwider as arrangement positions are closer to outside (second alignmentpatterns 521 being farther away from the center). In other words, exceptfor the second alignment pattern 521 at the center, a pitch between thesecond alignment pattern 52 and a previous-level second alignmentpattern 52 (the second alignment pattern 521 being closer to the center)is smaller than a pitch between the second alignment pattern 52 and anext-level second alignment pattern 52 (being farther away from thecenter point) by a preset distance.

Here, the second alignment pattern 521 at the center point is regardedas a first-level second alignment pattern, an adjacent second alignmentpattern 52 at a periphery thereof is regarded as a second-level secondalignment pattern 522, and an alignment pattern at a periphery of thesecond-level second alignment pattern 522 is a third-level secondalignment pattern 523. The pitch between the first-level secondalignment pattern (the second alignment pattern 521 at the center point)and the second-level second alignment pattern 522 is R, and the presetdistance is 1, so that the pitch between the second-level secondalignment pattern 522 and the third-level second alignment pattern 523is R+1, the pitch between the third-level second alignment pattern 523and a fourth-level second alignment pattern 524 is R+2, and so forth.

As shown in FIGS. 2E, 2F, and 2I, the third panel 43 also includes acalibration area 431 at a periphery thereon. A plurality of thirdalignment patterns 53 is arranged on the calibration area 431. The thirdalignment patterns 53 form a geometric pattern similar to the crossformed by the first alignment patterns 51, and are arranged outwardly ina distributed manner starting with a third alignment pattern 531 at thecenter of the cross. However, it is different from the first alignmentpatterns 51 that the two adjacent third alignment patterns 53 on thesame straight line are arranged with a pitch being narrower asarrangement positions are closer to outside (the third alignmentpatterns 531 being farther away from the center). In other words, exceptfor the third alignment pattern 531 at the center, a pitch between eachthird alignment pattern 53 and a previous-level third alignment pattern53 (a third alignment pattern 531 being closer to the center) is largerthan a pitch between the third alignment pattern 53 and a next-levelthird alignment pattern 53 (a third alignment pattern 531 being fartheraway from the center) by a preset distance. However, the preset distanceis not limited to 1.

Here, the third alignment pattern 531 at the center is a first-levelthird alignment pattern, an adjacent third alignment pattern 53 at aperiphery thereof is a second-level third alignment pattern 532, and analignment pattern at a periphery of the second-level third alignmentpattern 532 is a third-level third alignment pattern 533. The pitchbetween the first-level third alignment pattern (the third alignmentpattern 531 at the center) and the second-level third alignment pattern532 is R, and the preset distance is 1, so that the pitch between thesecond-level third alignment pattern 532 and the third-level thirdalignment pattern 533 is R−1, the pitch between the third-level thirdalignment pattern 533 and the fourth-level third alignment pattern 534is R−2, and so forth.

As shown in FIG. 1A, an operation unit 10 first controls an elementplacement unit 30 to acquire the first panel 41 and then place the firstpanel 41 on a carrying platform 11. After the first panel 41 is placed,the operation unit 10 controls at least one photographing unit 20 tophotograph an alignment situation between the first panel 41 and thesecond panel 42, that is, to photograph an overlap status between thefirst alignment pattern 51 and the second alignment pattern 52, so as toform a first image. It should be noted here that the element placementunit 30 can be an element removal and placement device or component forgrasping and sucking a panel, such as a hollow suction cup or amechanical manipulator. However, the present invention is not limitedherein, and any device capable of performing panel removal or placementis applicable. The photographing unit 20 is connected through a movabletable or a movable lever 12. The movable lever 12 is then controlled bythe operation unit 10 to move the photographing unit 20, so thephotographing unit 20 can move according to a specific track. However,the technologies that the photographing unit 20 moves the panel incombination with the movable lever 12 and the element placement unit 30exist in the prior art and are well known to persons of ordinary skillin the technical field of the present invention, so the technologies areshown with simplified diagrams and are not illustrated here.

FIG. 3A is a schematic view of ideal overlap of alignment patternsaccording to an embodiment of the present invention. FIG. 3B is aschematic view of content of a first image according to an embodiment ofthe present invention. FIG. 3C is a schematic view of selection of athird overlap pattern according to an embodiment of the presentinvention. FIG. 3D is a schematic view of content of a second imageaccording to an embodiment of the present invention. As shown in FIG.3A, when the first panel 41 and the second panel 42 are overlapped, themost ideal overlap situation is that the first alignment pattern 511 atthe center of the cross is overlapped with the second alignment pattern521 at the center. However, practical alignment situations are differentfrom the ideal situation.

As shown in FIGS. 1A and 3B, the operation unit 10 acquires a firstimage, and analyzes at least one first overlap pattern and at least onesecond overlap pattern overlapped with each other in all the firstalignment patterns 51 and the second alignment patterns 52. As shown inFIG. 3B, it is assumed that when the first panel 41 and the second panel42 are overlapped, the second panel 42 has a slight offset, so theoverlapped alignment patterns are the third-level first alignmentpattern 513 and the third-level second alignment pattern 523, and anoffset direction is −X, which represents that the first overlap patternis the third-level first alignment pattern 513 in the −X direction, andthe second overlap pattern is the third-level second alignment pattern523 in the −X direction, that is, the two alignment patterns inside adotted-line circle.

As shown in FIG. 3C, the operation unit 10 analyzes which one among allthe third alignment patterns 53 is the third overlap patterncorresponding to the first overlap pattern and second overlap pattern.As for this example, the operation unit 10 analyzes that the third-levelthird alignment pattern 533 in the offset direction −X is the qualifiedthird overlap pattern.

As shown in FIGS. 1B and 3D, the operation unit 10 controls thephotographing unit 20 to continuously photograph an overlap positionbetween the first overlap pattern and the second overlap pattern, so asto form a second image. The operation unit 10 then controls the elementplacement unit 30 to place the third panel 43 on the second panel 42.When the third panel 43 is placed, the operation unit 10 analyzes acurrent alignment status of the panel according to the continuouslygenerated second images, so the qualified third overlap pattern isoverlapped with the second overlap pattern, such that the liquid crystalpanel presents a display offset angle of the frame after adjustment ofthe panel assembly.

The photographing unit 20 photographs overlaps of the alignment patternsone by one by using arrangement of straight lines of the cross (nomatter the first alignment pattern or the second alignment pattern isused as a reference) as a movement track. For FIGS. 1A and 3B, thephotographing unit performs displacement photographing in an X-axisdirection and a Y-axis direction (having no precedence order).Afterwards, the operation unit 10 analyzes an overlap degree between thefirst alignment pattern 51 and the second alignment pattern 52 at thesame level by using the first alignment pattern 51 as a reference, findsout the first overlap pattern and the second overlap pattern overlappedwith each other, and finds out an offset direction of the second panel42 corresponding to the first panel 41.

FIG. 4A is another schematic view of content of a first image accordingto an embodiment of the present invention. FIG. 4B is schematic view ofanother selection of a third overlap pattern according to an embodimentof the present invention. FIG. 4C is another schematic view of contentof a second image according to an embodiment of the present invention.

As shown in FIGS. 1A and 4A, the operation unit 10 acquires a firstimage, and analyzes at least one first overlap pattern and at least onesecond overlap pattern overlapped with each other in all the firstalignment patterns 51 and the second alignment patterns 52. As shown inFIG. 4A, it is assumed that when the first panel 41 and the second panel42 are overlapped, the second panel 42 has a slight offset, so theoverlapped alignment patterns are a fourth-level first alignment pattern514 and a fourth-level second alignment pattern 524, and an offsetdirection is Y, which represents that the first overlap pattern is thefourth-level first alignment pattern 514 in Y direction, and the secondoverlap pattern is the fourth-level second alignment pattern 524 in theY direction, that is, the two alignment patterns inside a dotted-linecircle.

As shown in FIG. 4B, the operation unit 10 analyzes which one among allthe third alignment patterns 53 is a third overlap pattern correspondingto the first overlap pattern and the second overlap pattern. As for thisexample, the operation unit 10 analyzes that the fourth-level thirdalignment pattern 534 in the offset direction Y is the qualified thirdoverlap pattern.

As shown in FIGS. 1B and 4C, the operation unit 10 controls thephotographing unit 20 to continuously photograph an overlap positionbetween the first overlap pattern and the second overlap pattern, so asto form a second image. The operation unit 10 then controls the elementplacement unit 30 to place the third panel 43 on the second panel 42.When the third panel 43 is placed, a current alignment status isanalyzed according to the continuously generated second images, so thequalified third overlap pattern is overlapped with the second overlappattern, such that the liquid crystal panel presents a display offsetangle of the frame after adjustment of the panel assembly.

Similarly, the offset direction of the second panel 42 corresponding tothe first panel 41 is an X direction or a −Y direction, and thecorresponding third overlap pattern also needs to be found out in thismode, so as to control and adjust an offset direction of the third panel43 placed on the second panel 42.

In addition, the first alignment pattern 51, the second alignmentpattern 52, and the third alignment pattern 53 are the same, the secondalignment pattern 52 is larger than the third alignment pattern 53, anda size of the first alignment pattern 51 is between sizes of the secondalignment pattern 52 and third alignment pattern 53, but the presentinvention is not limited herein.

FIGS. 5A and 5B are schematic views of another architecture of a panelassembly alignment system according to an embodiment of the presentinvention. It is different from the architecture views shown in FIGS. 1Aand 1B that a plurality of the photographing unit exists in this system,and two photographing units are taken as an example for illustrationhere.

In this embodiment, a first photographing unit 21 performs displacementphotographing in an X-axis direction, and a second photographing unit 22performs displacement photographing in a Y-axis direction. However, thepattern design and the size of the alignment pattern may cause that agroup of overlap patterns exists in different axial directions, so theoperation unit 10 acquires one or two groups of overlap patterns duringdetermination of overlap patterns.

If two groups of overlap patterns exist, the operation unit 10 analyzestwo third alignment patterns 53 conforming to the overlap pattern demandin the third alignment patterns 53, for serving as the third overlappatterns. Afterwards, the operation unit 10 controls the elementplacement unit 30 to place the third panel 43 on the second panel 42,and when the third panel 43 is placed, a current alignment offset statusof the panel is analyzed according to the continuously generated secondimages, so the two qualified third overlap patterns are overlapped withtwo corresponding second overlap patterns, such that the liquid crystalpanel presents a display offset angle of the frame after adjustment ofthe panel assembly.

FIG. 6A is a schematic flow chart of a panel assembly alignment methodaccording to an embodiment of the present invention, and FIG. 6B is adetailed schematic flow chart of the process in FIG. 6A according to anembodiment of the present invention. For ease of understanding, pleaserefer to FIGS. 1A and 5B at the same time. The process of the method isdescribed as follows.

A first panel 41 is placed on a carrying platform 11. A plurality offirst alignment patterns 51 is arranged to form a geometric pattern andis arranged at a calibration area 411 of the first panel 41 at equalpitches outwardly from a center of the geometric pattern (Step S110).The first panel 41 includes a calibration area 411 at a peripherythereon. A plurality of first alignment patterns 51 is arranged on thecalibration area 411. The first alignment patterns 51 form a shape forpositioning. Here, a cross arranged by two straight lines beinginterlaced and perpendicular to each other is taken as an example, butthe present invention is not limited herein. The first alignment pattern51 is outwardly arranged starting with the first alignment pattern 511at a center of the cross, and a pitch between every two adjacent firstalignment patterns 51 is the same. It should be noted that here thepitch is a distance between centers of every two alignment patterns, andmay also be calculated with outer sidelines at a periphery of thealignment patterns. Here, the pitch is R. The operation unit firstcontrols the element placement unit to acquire the first panel, andplaces the first panel 41 on the carrying platform 11.

A second panel 42 is placed on the first panel 41, so the firstalignment patterns 51 correspond to the plurality of second alignmentpatterns 52 of the second panel 42. The second alignment patterns 52 arearranged to form the geometric pattern, and arranged at a calibrationarea 421 of a second panel 42 with a pitch between adjacent secondalignment patterns 52 on the same straight line being wider as positionsof the adjacent second alignment patterns 52 farther away from thecenter of the geometric pattern (Step S120).

The second panel 42 also includes a calibration area 421 at a peripherythereon. A plurality of second alignment patterns 52 is arranged on thecalibration area 421. The second alignment patterns 52 form a patternsimilar to a cross formed by the first alignment patterns 51, and arearranged outwardly starting with the second alignment pattern 521 at thecenter of the cross. The two adjacent second alignment patterns 52 onthe same straight line are arranged with a pitch being wider asarrangement positions are closer to outside (farther away from thecenter point of the cross). In other words, except for the secondalignment pattern 521 at the center, a pitch between each secondalignment pattern 52 and a previous-level second alignment pattern 52(the second alignment pattern 521 being closer to the center) is smallerthan a pitch between the second alignment pattern 52 and a next-levelsecond alignment pattern 52 (the second alignment pattern 521 beingfarther away from the center) by a preset distance.

The operation unit 10 controls the element placement unit 30 to placethe first panel 41 on the carrying platform 11, and then controls the atleast one photographing unit 20 to photograph an overlap status betweenthe first alignment pattern 51 and the second alignment pattern 52, soas to form a first image.

At least one first overlap pattern and at least one second overlappattern overlapped with each other and an offset direction of the secondpanel 42 corresponding to the first panel 41 are found out from thefirst alignment patterns 51 and second alignment patterns 52, so as tofind out at least one third overlap pattern from a plurality of thirdalignment patterns 53 of a third panel 43. The third alignment patterns53 are also arranged to form the geometric pattern, and are arranged ata calibration area 431 of a third panel 43 with a pitch between adjacentthird alignment patterns 53 on the same straight line being narrower aspositions of the third alignment patterns 53 are farther away from thecenter of the geometric pattern (Step S130). The operation unit 10acquires a first image, and analyzes at least one first overlap patternand at least one second overlap pattern overlapped with each other inall the first alignment patterns 51 and the second alignment patterns52.

However, the method for analyzing the overlap of the alignment patternsis described as follows.

An overlap degree between the first alignment pattern 51 and the secondalignment pattern 52 arranged on the same straight line and at the samelevel is analyzed (Step S131). The photographing unit 20 photographsoverlaps of the alignment patterns one by one by using arrangement ofstraight lines of a cross (no matter the first alignment patterns or thesecond alignment patterns) as a movement track. The first image formedthrough photographing is received by the operation unit 10, and theoverlap degree between the first alignment pattern 51 and the secondalignment pattern 52 at the same level is analyzed.

A first overlap pattern and a second overlap pattern having the highestoverlap degree are found out (Step S132). The operation unit 10 mayanalyze the first alignment pattern 51 and the second alignment pattern52 having the highest overlap degree and at the same level, for servingas the first overlap pattern and the second overlap pattern. Afterwards,according to an overlap position between the first overlap pattern andthe second overlap pattern, an offset direction of the second panel 42corresponding to the first panel 41 is determined (Step S133). TakingFIG. 3B as an example, the operation unit 10 determines that thethird-level first alignment pattern 513 and the third-level secondalignment pattern 523 in the −X direction are overlapped with eachother, and recognizes that the offset direction of the second panel 42corresponding to the first panel 41 is −X. Further, taking FIG. 4C as anexample, the operation unit 10 determines that the fourth-level firstalignment pattern 514 and the fourth-level second alignment pattern 524in the Y direction are overlapped with each other, and recognizes thatthe offset direction of the second panel 42 corresponding to the firstpanel 41 is Y.

The third panel 43 is placed on the second panel 42, so the thirdoverlap pattern is overlapped with the second overlap pattern (StepS140). The operation unit 10 analyzes which one among all the thirdalignment patterns 53 is a third overlap pattern corresponding to thefirst overlap pattern and the second overlap pattern. Afterwards, theoperation unit 10 controls the photographing unit 20 to continuouslyphotograph an overlap position between the first overlap pattern and thesecond overlap pattern, so as to form a second image. The operation unit10 then controls the element placement unit 30 to place the third panel43 on the second panel 42. When the third panel 43 is placed, accordingto the continuously generated second images, the current alignmentstatus of the panel is analyzed, so the qualified third overlap patternis overlapped with the second overlap pattern, such that the liquidcrystal panel presents a display offset angle of the frame afteradjustment of the panel assembly.

In conclusion, only the implementation modes or embodiments forpresenting the technical means for solving the problems of the presentinvention are recorded, which are not intended to limit the patent scopeof the present invention. All the equivalent changes and modificationsthat accord with the meanings of the patent scope of the presentinvention or that are made according to the patent scope of the presentinvention should fall within the scope of the present invention.

What is claimed is:
 1. A panel assembly alignment system, comprising: aplurality of first alignment patterns, forming a geometric pattern, andarranged at a calibration area of a first panel at equal pitchesoutwardly from a center of the geometric pattern; a plurality of secondalignment patterns, forming the geometric pattern, and arranged at acalibration area of a second panel with a pitch between the adjacentsecond alignment patterns on a same straight line being wider aspositions of the second alignment patterns are farther away from thecenter of the geometric pattern; a plurality of third alignmentpatterns, forming the geometric pattern, arranged at a calibration areaof a third panel with a pitch between the adjacent third alignmentpatterns on a same straight line being narrower as positions of thethird alignment patterns are farther away from the center of thegeometric pattern; an element placement unit, for placing the firstpanel, the second panel, and the third panel in sequence, wherein thefirst alignment patterns correspond to the second alignment patterns,and the second alignment patterns correspond to the third alignmentpatterns; at least one photographing unit, photographing alignment ofthe first alignment patterns and the second alignment patterns to form afirst image, and continuously photographing alignment of the secondalignment patterns and the third alignment patterns to form a secondimage; and an operation unit, acquiring the first image, so as to findout at least one first overlap pattern and at least one second overlappattern overlapped with each other from the first alignment patterns andthe second alignment patterns, and find out an offset direction of thesecond panel corresponding to the first panel, and overlapping at leastone third overlap pattern conforming to the offset direction in thethird alignment patterns with the second overlap pattern whencontrolling the element placement unit to place the third panelaccording to the second image.
 2. The panel assembly alignment systemaccording to claim 1, wherein when the second alignment patterns arearranged, a plurality of levels is formed outwardly from the center ofthe geometric pattern, except for the second alignment pattern at thecenter of the geometric pattern, a pitch between the second alignmentpattern at each level and a previous-level second alignment patternexceeds a pitch between the second alignment pattern and a next-levelsecond alignment pattern by a preset distance.
 3. The panel assemblyalignment system according to claim 1, wherein when the third alignmentpatterns are arranged, except for the third alignment pattern at thecenter of the geometric pattern, a pitch between the third alignmentpattern at each level and a previous-level third alignment pattern issmaller than a pitch between the third alignment pattern and anext-level third alignment pattern by a preset distance.
 4. The panelassembly alignment system according to claim 1, wherein when the firstalignment patterns and the second alignment patterns are overlapped toobtain the two first overlap patterns and the two second overlappatterns, a pattern overlap level between the first overlap patterns andthe second overlap patterns and the offset direction of the second panelcorresponding to the first panel are calculated, so as to find out thetwo third overlap patterns from the third alignment patterns, andoverlap the third overlap patterns with the second overlap patterns whenthe element placement unit is controlled to place the third panel. 5.The panel assembly alignment system according to claim 1, wherein thegeometric pattern is a cross arranged by two straight lines beinginterlaced and perpendicular to each other, the photographing unitphotographs overlap of the alignment patterns one by one by usingarrangement of the straight lines as a movement track, and the operationunit finds out the first overlap pattern and the second overlap patternoverlapped with each other according to an overlap degree between thefirst alignment pattern and the second alignment pattern at a samelevel.
 6. The panel assembly alignment system according to claim 1,wherein the first alignment pattern, the second alignment pattern, andthe third alignment pattern are same, the second alignment pattern islarger than the third alignment pattern, and the first alignment patternhas a size between sizes of the second alignment pattern and the thirdalignment pattern.
 7. A panel assembly alignment method, comprising:placing a first panel on a carrying platform, wherein a plurality offirst alignment patterns is arranged to form a geometric pattern andarranged at a calibration area of the first panel at equal pitchesoutwardly from a center of the geometric pattern; placing a second panelon the first panel, so the first alignment patterns correspond to aplurality of second alignment patterns of the second panel, the secondalignment patterns are arranged to form the geometric pattern, andarranged at a calibration area of the second panel with a pitch betweenthe adjacent second alignment patterns on a same straight line beingwider as positions of the second alignment patterns are farther awayfrom the center of the geometric pattern; finding out at least one firstoverlap pattern and at least one second overlap pattern overlapped witheach other and an offset direction of the second panel corresponding tothe first panel from the first alignment patterns and the secondalignment patterns, so as to find out at least one third overlap patternfrom a plurality of third alignment patterns of a third panel, whereinthe third alignment patterns are arranged to form the geometric pattern,and arranged at a calibration area of the third panel with a pitchbetween the adjacent third alignment patterns on a same straight linebeing narrower as positions of the third alignment patterns are fartheraway from the center of the geometric pattern; and placing the thirdpanel on the second panel, so the at least one third overlap pattern isoverlapped with the at least one second overlap pattern.
 8. The panelassembly alignment method according to claim 7, wherein when the secondalignment patterns are arranged, a plurality of levels is formedoutwardly from the center of the geometric pattern, except for thesecond alignment pattern at the center of the geometric pattern, a pitchbetween the second alignment pattern at each level and a previous-levelsecond alignment pattern exceeds a pitch between the second alignmentpattern and a next-level second alignment pattern by a preset distance.9. The panel assembly alignment method according to claim 7, whereinwhen the third alignment patterns are arranged, except for the thirdalignment pattern at the center of the geometric pattern, a pitchbetween the third alignment pattern at each level and a previous-levelthird alignment pattern is smaller than a pitch between the thirdalignment pattern and a next-level third alignment pattern by a presetdistance.
 10. The panel assembly alignment method according to claim 7,wherein when the first alignment patterns and the second alignmentpatterns are overlapped to obtain the two first overlap patterns and thetwo second overlap patterns, the two third overlap patterns are foundout from the third alignment patterns according to a pattern overlaplevel of the first overlap patterns and the second overlap patterns andthe offset direction of the second panel corresponding to the firstpanel, and when the third panel is placed, the third overlap patternsare overlapped with the second overlap patterns.
 11. The panel assemblyalignment method according to claim 7, wherein the step of finding outthe at least one first overlap pattern and the at least one secondoverlap pattern overlapped with each other and the offset direction ofthe second panel corresponding to the first panel from the firstalignment patterns and the second alignment patterns comprises:analyzing an overlap degree between the first alignment pattern and thesecond alignment pattern arranged on the same straight line and at asame level; finding out the first overlap pattern and the second overlappattern having a highest overlap degree; and determining the offsetdirection of the second panel corresponding to the first panel accordingto the first overlap pattern and the second overlap pattern.
 12. Thepanel assembly alignment method according to claim 7, wherein the firstalignment pattern, the second alignment pattern, and the third alignmentpattern are the same, the second alignment pattern is larger than thethird alignment pattern, and a size of the first alignment pattern isbetween sizes of the second alignment pattern and the third alignmentpattern.